Features

• 18A, 500V, RDS(on) = 0.265Ω @VGS = 10 V

• Low gate charge ( typical 45 nC)

• Low Crss ( typical 25 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance,

and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction