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FGY160T65SPD-F085 IGBT - Field Stop, Trench, Soft Fast Recovery Diode 650 V, 160 A

  • Author:lulu
  • Source:www.ic-stocks.com
  • Release on:2021-03-03

FGY160T65SPD-F085

Benefits

• Very Low Conduction and Switching Losses for a High Efficiency Operation in Various

Applications

• Rugged Transient Reliability

• Outstanding Parallel Operation Performance with Balance Current Sharing

• Low EMI Features

• AEC−Q101 Qualified and PPAP Capable

• Very Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 160 A

• Maximum Junction Temperature: TJ = 175°C

• Positive Temperature Co−Efficient

• Tight Parameter Distribution

• High Input Impedance

• 100% of the Parts are Dynamically Tested

• Short circuit ruggedness > 6 s @ 25°C

• Copacked with Soft, Fast Recovery Extremefast Diode

• This Device is Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications

• Traction Inverter for HEV/EV • Auxiliary DC/AC Converter

• Motor Drives

• Other Power−Train Applications Requiring High Power Switch

Product Attribute Attribute Value Search Similar
ON Semiconductor
IGBT Transistors
RoHS: Details
Si
TO-247-3
Through Hole
Single
650 V
1.6 V
20 V
240 A
882 W
- 55 C
+ 175 C
FGY160T65S_F085
AEC-Q101
Tube
Brand: ON Semiconductor / Fairchild
Gate-Emitter Leakage Current: +/- 250 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 450
Subcategory: IGBTs
Part # Aliases: FGY160T65SPD_F085
Unit Weight: 0.215171 oz



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