FDP18N50 / FDPF18N50
500V N-Channel MOSFET
• 18A, 500V, RDS(on) = 0.265Ω @VGS = 10 V
• Low gate charge ( typical 45 nC)
• Low Crss ( typical 25 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
New and Original in the stock, Welcome to send the request to us!
Contact us if you have any questions or need help.
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