SuperSOTTM-3 N-Channel logic level enhancement modepower field effect transistors are produced using Fairchild'sproprietary, high cell density, DMOS technology. This veryhigh density process is especially tailored to minimizeon-state resistance.
These devices are particularly suited forlow voltage applications in notebook computers, portablephones, PCMCIA cards, and other battery powered circuitswhere fast switching, and low in-line power loss are neededin a very small outline surface mount package.
2.2 A, 30 V, RDS(ON)= 0.065 W @ VGS = 4.5 VRDS(ON)= 0.082 W @ VGS = 2.5 V.Industry standard outline SOT-23 surface mountpackage using proprietary SuperSOTTM-3 design forsuperior thermal and electrical capabilities.High density cell design for extremely low RDS(ON).Exceptional on-resistance and maximum DC currentcapability.
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