These N-Channel enhancement mode power field effecttransistors are produced using Fairchild’s proprietary,planar stripe, DMOS technology.
This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in theavalanche and commutation mode.
These devices are wellsuited for low voltage applications such as audio amplifier,high efficiency switching DC/DC converters, and DC motor control.
• 57A, 100V, RDS(on) = 0.023Ω @VGS = 10 V
• Low gate charge ( typical 85 nC)
• Low Crss ( typical 150 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
New and Original in the stock, welcome to send the request to us!