The H27UAG8T2B is a single 3.3V 16Gbit NAND flash memory. The Device contains 2 planes in a single die. Each planeis made up of the 512 blocks. Each block consists of 256 programmable pages. Each page contains 8,640 bytes.

Thepages are subdivided into an 8,192-bytes main data storage area with a spare 448-byte district.Page program operation can be performed in typical 1,600us, and a single block can be erased in typical 2.5ms. Onchipcontrol logic unit automates erase and program operations to maximize cycle endurance.

E/W endurance is stipulatedat 3,000 cycles when using relevant ECC and Error management.The H27UAG8T2B is a best solution for applications requiring large nonvolatile storage memory.