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IR21084S HALF-BRIDGE DRIVER www.ic-stocks.com

  • Author:salmon ye
  • Source:www.ic-stocks.com
  • Release on:2021-11-17


•Floating channel designed for bootstrap operation

Fully operational to +600V

Tolerant to negative transient voltage

dV/dt immune

•Gate drive supply range from 10 to 20V

•Undervoltage lockout for both channels

•3.3V, 5V and 15V input logic compatible

•Cross-conduction prevention logic

•Matched propagation delay for both channels

•High side output in phase with HIN input

•Low side output out of phase with LIN input

•Logic and power ground +/- 5V offset.

Internal 540ns dead-time, and programmable up to 5us with one external RDT resistor (IR21084)

•Lower di/dt gate driver for better noise immunity

•Available in Lead-Free


The IR2108(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with depen-dent high and low side referenced output

channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.

The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.

The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

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