•Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
•Gate drive supply range from 10 to 20V
•Undervoltage lockout for both channels
•3.3V, 5V and 15V input logic compatible
•Cross-conduction prevention logic
•Matched propagation delay for both channels
•High side output in phase with HIN input
•Low side output out of phase with LIN input
•Logic and power ground +/- 5V offset.
•Internal 540ns dead-time, and programmable up to 5us with one external RDT resistor (IR21084)
•Lower di/dt gate driver for better noise immunity
•Available in Lead-Free
The IR2108(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with depen-dent high and low side referenced output
channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.
The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.
The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
IC suppliers in China
Manufacturer of electroniccomponents
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Electrolytic capacitor Agent
Aishi Electrolytic capacitor Agent
Hi-Link HLK module manufacture global agent