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IRLR3410 IR TO-252 MOSFET 100V 1 N-CH HEXFET 105mOhms 22.7nC IRLR3410TRPBF

  • Author:lulu
  • Source:www.ic-stocks.com
  • Release on:2019-04-17

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications

Logic Level Gate Drive 

Ultra Low On-Resistance 

Surface Mount (IRLR3410) 

Straight Lead (IRLU3410) 

Advanced Process Technology 

Fast Switching 

Fully Avalanche Rated 


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