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Macronix 3V, 1Gb/2G-bit Serial NAND Flash Memory MX35LFxGE4AB ic-stocks

  • Author:salmon ye
  • Source:www.ic-stocks.com
  • Release on:2018-08-16

1. FEATURES

• 1Gb/2Gb SLC NAND Flash- Bus: x4- Page size: (2048+64) byte- Block size: (128K+4K) byte

• Fast Read Access- Supports Random data read out by x1 x2 &x4 modes, (1-1-1,1-1-2, 1-1-4)Note 2- Latency of array to register: 25usNote1- Frequency: 104MHz

• Page Program Operation- Page program time: 300us (typ)Note1

• Block Erase Operation- Block erase time: 1ms (typ.)

• Single Voltage Operation:- VCC: 2.7 to 3.6V

• BP bits for block group protection

• Low Power Dissipation- Max 30mAActive current (Read/Program/Erase)

• Sleep Mode- 50uA (Max) standby current

• High Reliability- Program / Erase Endurance: Typical 100K cycles(with internal 4-bit ECC per (512+16) Byte- Data Retention: 10 years

• Wide Temperature Operating Range-40°C to +85°C• Package:1) 8-WSON (8x6mm) for 1Gb2)16-SOP (300mil) for 2GbAll packaged devices are RoHS Compliant andHalogen-free.

2. GENERAL DESCRIPTIONS

The MX35LFxGE4AB is a 1Gb/2Gb SLC NAND Flash memory device with Serial interface.The memory array of this device adopted the same cell architecture as the parallel NAND, howeverimplementing the industry standard serial interface.

An internal 4-bit ECC logic is implemented in the chip, which is enabled by default. The internal ECC can bedisabled or enabled again by command. When the internal 4-bit ECC logic is disabled, the host side needsto handle the 4-bit ECC by host micro controller.



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