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Micron MT29F4G08ABADAWPD NAND Flash Memory Features ic-stocks

  • Author:Salmon Ye
  • Source:www.ic-stocks.com
  • Release on:2019-11-29

• Open NAND Flash Interface (ONFI) 1.0-compliant1

• Single-level cell (SLC) technology

• Organization

– Page size x8: 2112 bytes (2048 + 64 bytes)

– Page size x16: 1056 words (1024 + 32 words)

– Block size: 64 pages (128K + 4K bytes)

– Plane size: 2 planes x 2048 blocks per plane

– Device size: 4Gb: 4096 blocks; 8Gb: 8192 blocks16Gb: 16,384 blocks

• Asynchronous I/O performance

–tRC/tWC: 20ns (3.3V), 25ns (1.8V)

• Array performance

– Read page: 25µs 3

– Program page: 200µs (TYP: 1.8V, 3.3V)3

– Erase block: 700µs (TYP)

• Command set: ONFI NAND Flash Protocol

• Advanced command set

– Program page cache mode4

– Read page cache mode 4

– One-time programmable (OTP) mode

– Two-plane commands 4

– Interleaved die (LUN) operations

– Read unique ID

– Block lock (1.8V only)

– Internal data move

• Operation status byte provides software method fordetecting

– Operation completion

– Pass/fail condition

– Write-protect status

• Ready/Busy# (R/B#) signal provides a hardwaremethod of detecting operation completion

• WP# signal: Write protect entire device

• First block (block address 00h) is valid when shippedfrom factory with ECC. For minimum requiredECC, see Error Management.

• Block 0 requires 1-bit ECC if PROGRAM/ERASE cyclesare less than 1000

• RESET (FFh) required as first command after power-on

• Alternate method of device initialization (Nand_Init)after power up (contact factory)

• Internal data move operations supported within theplane from which data is read• Quality and reliability– Data retention: 10 years– Endurance: 100,000 PROGRAM/ERASE cycles

• Operating voltage range

– VCC: 2.7–3.6V– VCC: 1.7–1.95V

• Operating temperature:

– Commercial: 0°C to +70°C

– Industrial (IT):

–40ºC to +85ºC• Package

– 48-pin TSOP type 1, CPL2– 63-ball VFBGA

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