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News
Renesas RQA0009SXAQSTL-E Silicon N-Channel MOS FET ic-stocks
- Author:salmon ye
- Source:www.ic-stocks.com
- Release on:2018-09-07
Features
• High Output Power, High Gain, High EfficiencyPout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65%(VDS = 6 V, f = 520 MHz)
• Compact package capable of surface mounting
• Electrostatic Discharge Immunity Test(IEC Standard, 61000-4-2, Level4)
New and Original in the stock, welcome to send the request to us!
Contact us if you have any questions or need help.
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LINGCHENG makes your dream come true.