These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.
• Switching applications
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
LINGCHENG makes your dream come true.
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