Beeld |
Onderdeel nummer |
fabrikanten |
Beschrijving |
Uitzicht |
|
GP1M003A050HG |
Global Power Technologies Group |
MOSFET N-CH 500V 2.5A TO220 |
Onderzoek |
|
GP15MHE3/73 |
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1.5A DO204 |
Onderzoek |
|
GP1M003A040CG |
Global Power Technologies Group |
MOSFET N-CH 400V 2A DPAK |
Onderzoek |
|
GP1605 C0G |
Taiwan Semiconductor Corporation |
DIODE, 16A, 600V, TO-220AB |
Onderzoek |
|
GP1604HC0G |
Taiwan Semiconductor Corporation |
DIODE, 16A, 400V, AEC-Q101, TO-2 |
Onderzoek |
|
GP1M003A040PG |
Global Power Technologies Group |
MOSFET N-CH 400V 2A IPAK |
Onderzoek |
|
GP1604 C0G |
Taiwan Semiconductor Corporation |
DIODE, 16A, 400V, TO-220AB |
Onderzoek |
|
GP1601 C0G |
Taiwan Semiconductor Corporation |
DIODE, 16A, 50V, TO-220AB |
Onderzoek |
|
GP1M003A050FG |
Global Power Technologies Group |
MOSFET N-CH 500V 2.5A TO220F |
Onderzoek |
|
GP1607 C0G |
Taiwan Semiconductor Corporation |
DIODE, 16A, 1000V, TO-220AB |
Onderzoek |
|
GP1601HC0G |
Taiwan Semiconductor Corporation |
DIODE, 16A, 50V, AEC-Q101, TO-22 |
Onderzoek |
|
GP1M003A050CG |
Global Power Technologies Group |
MOSFET N-CH 500V 2.5A DPAK |
Onderzoek |
|
GP1602HC0G |
Taiwan Semiconductor Corporation |
DIODE, 16A, 100V, AEC-Q101, TO-2 |
Onderzoek |
|
GP1607HC0G |
Taiwan Semiconductor Corporation |
DIODE, 16A, 1000V, AEC-Q101, TO- |
Onderzoek |
|
GP1603HC0G |
Taiwan Semiconductor Corporation |
DIODE, 16A, 200V, AEC-Q101, TO-2 |
Onderzoek |
|
GP1M003A050PG |
Global Power Technologies Group |
MOSFET N-CH 500V 2.5A IPAK |
Onderzoek |
|
GP1606HC0G |
Taiwan Semiconductor Corporation |
DIODE, 16A, 800V, AEC-Q101, TO-2 |
Onderzoek |
|
GP1603 C0G |
Taiwan Semiconductor Corporation |
DIODE, 16A, 200V, TO-220AB |
Onderzoek |
|
GP1602 C0G |
Taiwan Semiconductor Corporation |
DIODE, 16A, 100V, TO-220AB |
Onderzoek |
|
GP1606 C0G |
Taiwan Semiconductor Corporation |
DIODE, 16A, 800V, TO-220AB |
Onderzoek |