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SI2312BDS-T1-GE3
SI2312BDS-T1-GE3
Part Number:
SI2312BDS-T1-GE3
Manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 20V 3.9A SOT23-3
RoHs Status:
Lead free / RoHS Compliant
Stock Quantity:
0 pcs

Introduction

We can supply part# SI2312BDS-T1-GE3, use the request quote form to request SI2312BDS-T1-GE3 pirce and lead time. Source Electronic Components - www.ic-stocks.com is an independent stocking distributor of electronic components. With 3+ Million line items of available electronic components can ship in short lead-time, over 300 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI2312BDS-T1-GE3.The price and lead time for SI2312BDS-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI2312BDS-T1-GE3.We look forward to doing business with you.

Specifications

Vgs(th) (Max) @ Id:850mV @ 250A
Vgs (Max):8V
Technology:MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs:31 mOhm @ 5A, 4.5V
Power Dissipation (Max):750mW (Ta)
Package:SOT-23-3 (TO-236)
Operating Temperature:-55C ~ 150C (TJ)
Mounting Type:Surface Mount
Gate Charge (Qg) (Max) @ Vgs:12nC @ 4.5V
FET Type:N-Channel
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25掳C:3.9A (Ta)
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