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STB30NF10T4 Low gate charge STripFET™ II Power MOSFET www.ic-stocks.com

  • автор:salmon ye
  • Источник:www.ic-stocks.com
  • Освободить:2021-09-07

General features

Exceptional dv/dt capability

100% avalanche tested

Application oriented characterization

Description

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and

less critical alignment steps therefore a remarkable manufacturing reproducibility

Applications

Switching application









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