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STM Trans IGBT Chip N-CH STGW40V60DF ic-stocks

Author:salmon ye
Source:www.ic-stocks.com
Release on:2018-03-27

Trench gate field-stop IGBT, V series 600 V, 40 A very high speed

Features

• Maximum junction temperature: TJ = 175 °C

• Tail-less switching off

• VCE(sat) = 1.8 V (typ.) @ IC = 40 A

• Tight parameters distribution

• Safe paralleling

• Low thermal resistance

• Very fast soft recovery antiparallel diode

Applications

• Photovoltaic inverters

• Uninterruptible power supply

• Welding

• Power factor correction

• Very high frequency converters

Description

This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between

conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

New and Original in the stock, Welcome to send the request to us!

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