◆N-Channel Power MOS FET

◆DMOS Structure

◆Low On-State Resistance: 0.11Ω (max)

◆Ultra High-Speed Switching

◆SOT-89 Package

■Applications

●Notebook PCs

●Cellular and portable phones

●On-board power supplies

●Li-ion battery systems

■General Description

The XP161A02A1PR is an N-Channel Power MOS FET with low on-stateresistance and ultra high-speed switching characteristics.Because high-speed switching is possible, the IC can be efficiently setthereby saving energy.The small SOT-89 package makes high density mounting possible

■Features

Low on-state resistance: Rds(on)=0.11Ω(Vgs=4.5V): Rds(on)=0.17Ω(Vgs=2.5V)Ultra high-speed switchingOperational Voltage : 2.5VHigh density mounting : SOT-89

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