◆N-Channel Power MOS FET
◆Low On-State Resistance: 0.11Ω (max)
◆Ultra High-Speed Switching
●Cellular and portable phones
●On-board power supplies
●Li-ion battery systems
The XP161A02A1PR is an N-Channel Power MOS FET with low on-stateresistance and ultra high-speed switching characteristics.Because high-speed switching is possible, the IC can be efficiently setthereby saving energy.The small SOT-89 package makes high density mounting possible
Low on-state resistance: Rds(on)=0.11Ω(Vgs=4.5V): Rds(on)=0.17Ω(Vgs=2.5V)Ultra high-speed switchingOperational Voltage : 2.5VHigh density mounting : SOT-89
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